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SiC diode has low EMI for solar inverters

Data:2016-05-24

The FFSH40120ADN is based on SiC and is claimed to have the best leakage current performance in its class, leaking far less current than its competitors at temperatures up to 175°C. Key benefits include fast switching and no reverse recovery current, which is claimed to dramatically reduce switching losses compared to silicon, and boosting energy efficiency. Faster switching also allows manufacturers to reduce the size of magnetic coils and associated passive components used in products to improve packaging efficiency, reduce system weight and can reduce bill of materials costs.


The diode can switch stably over a wide temperature range, with zero recovery voltage eliminating voltage overshoots.


The diode is rugged and reliable, with SiC having a breakdown field of SiC that is 10x higher than that of silicon and three times greater thermal conductivity.

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